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A Leakage Current-based Measurement of the Radiation Damage in the ATLAS Pixel Detector

机译:基于泄漏电流的aTLas辐射损伤测量   像素探测器

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摘要

A measurement has been made of the radiation damage incurred by the ATLASPixel Detector barrel silicon modules from the beginning of operations throughthe end of 2012. This translates to hadronic fluence received over the fullperiod of operation at energies up to and including 8 TeV. The measurement isbased on a per-module measurement of the silicon sensor leakage current. Theresults are presented as a function of integrated luminosity and compared topredictions by the Hamburg Model. This information can be used to predictlimits on the lifetime of the Pixel Detector due to current, for variousoperating scenarios.
机译:从运行开始到2012年底,已经对ATLASPixel检测器桶形硅模块造成的辐射损伤进行了测量。这转化为在整个工作周期内能量高达8 TeV时得到的强子通量。该测量基于硅传感器泄漏电流的每个模块测量。结果是综合光度的函数,并通过汉堡模型比较了预测。对于各种操作场景,此信息可用于预测由于电流导致的像素检测器的寿命限制。

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